IEEE C62.59-2019 pdf free download.IEEE Standard for Test Methods and Preferred Values for Silicon PN-Junction Clamping Diodes.
forward direction (of a PN junction): Direction of current that results when the P-type semiconductor region is at a positive voltage relative to the N-type region. NOTE—See IEC 60050-521-05-03 [B4]. forward recovery voltage, VFR: Varying voltage occurring during the forward recovery time after NOTE—See IEC 60747-2:2016 [B11]. forward voltage, VF NOTE—See IEC 60747-2:2016 [B11]. hole conduction: Conduction in a semiconductor, in which holes in a crystal lattice are propagated through NOTE—See IEC 60050-521-02-18 [B4]. Kelvin measurement: Four-wire electrical resistance technique that uses separate contacts for measuring NOTE 1—See IEC 62624 [B16]. NOTE 2— lead resistance. NOTE 3—Used for characterization of materials with electrical resistances comparable to or lower than the leads and contacts. lead temperature NOTE—See IEC 60747-1 [B10]. N-type semiconductor: Extrinsic semiconductor in which the conduction electron density exceeds the hole density. NOTE—See IEC 60050-521-02-09 [B4]. peak pulse current (impulse discharge current) NOTE—See IEC 61000-5-5. PN junction: Junction between P and N type semiconductor materials. NOTE—See IEC 60050-521-02-78 [B4]. P-type semiconductor: Extrinsic semiconductor in which the hole density exceeds the conduction electron density. NOTE—See IEC 60050-521-02-10 [B4]. punch-through (between two PN junctions): Contact between the space charge regions of two PN junctions as a result of widening of one or both of them.
5.4 Lead soldering temperature, Tmax . Legislation, such as the Waste Electrical and Electronic Equipment Directive (WEEE) and Restriction of Hazardous Substances Directive (RoHS) in the European Union, has accelerated the use of lead-free soldering. Removing the lead from solder results in increased soldering temperatures and component manufactures now routinely specify maximum soldering conditions in terms of component lead temperature, Tmax and temperature duration time, tmas (see IEC 60068-2-20 [B6]). Examples are 260 °C for 10 s and 260 °C for 40 s. 6. Essential characteristics and ratings 6.1 General For compatibility with general purpose breakdown diodes, the format of this clause follows that ofIEC 60747- 3 [B12]. Many of the ratings and characteristics are required to be quoted at a temperature of25。C and at one other specified temperature. 6.2 Electrical characteristics 6.2.1 PN-junction structure electrical characteristics 188.8.131.52 Single PN-junction This clasification covers forward biased diodes, reverse biased diodes, Zener breakdown diodes, and avalanche breakdown diodes. Symmetrical breakdown diodes are made by the series connection of a PN- junction and an NP-junction giving a limiting voltage of V/BR)+ V Such arrangements can be made in a single chip. The electrical characteristics and symbol identification for a forward conducting diode and a breakdown diode are shown in Figure 6 and Figure 7.
6.3 Thermal ratings 6.3.1 Storage temperature, Tstg Minimum and maximum values. 6.3.2 Operating ambient temperature, T。 Minimum and maximum values. 6.3.3 Lead soldering temperature, T Tmax, and temperature duration time, tmax. 6.3.4 Virtual junction temperature, internal equivalent temperature, TJ Maximum value. 6.4 Electrical ratings 6.4.1 Peak pulse current, Ipp Maximum value at a specified ambient or sink or case and virtual junction temperature. 6.4.2 Maximum peak pulse power, Ppp Maximum value at specifed current waveform. 6.4.3 Total power dissipation, Prot Where thermal resistance is not given in the characteristics, maximum total power dissipation in a specified thermal environment as a function of temperature over the range of operating temperatures shall be given.