IEC 60747-7-5-2005 pdf – Semiconductor devices – Discrete devices – Part 7-5: Bipolar transistors for power switching applications

IEC 60747-7-5-2005 pdf – Semiconductor devices – Discrete devices – Part 7-5: Bipolar transistors for power switching applications.
1 Scope This part of IEC 60747 gives requirements for bipolar switching transistors used for power switching application above 1 A. NOTE Requirements concerning bipolar transistors in general can be found in IEC 60747-7. 2 Normative references The following referenced documents are indispensable for the application of this document. For dated references, only the edition cited applies. For undated references, the latest edition of the referenced document (including any amendments) applies. IEC 60747-7, Semiconductor devices – Part 7: Bipolar transistors IEC 60747-1:1983, Semiconductor devices – Discrete devices and integrated circuits – Part 1: General 3 Terms and definitions For the purposes of this document, the following terms and definitions apply. 3.1 switching times t d(on) , t r , t s and t f as described in IEC 60747-1, but here the input waveform is the base current and the output waveform is the collector current 3.2 collector-emitter sustaining voltage V CE (SUS) the collector-emitter breakdown voltage at higher values of collector current where the breakdown voltage is relatively constant over decreasing collector current for a specified termination between base and emitter terminals 3.3 turn-on energy (per pulse) E on energy dissipated in transistor during turn-on 3.4 turn-off energy (per pulse) E off energy dissipated in transistor during turn-off
5 Essential ratings and characteristics 5.1 Ratings (limiting values) Ratings shall be valid for the whole range of operating conditions as stated for the particular device, with reference to a curve where appropriate. 5.1.1 Temperatures 5.1.1.1 Minimum and maximum of operating temperatures, ambient or case or virtual junction (T a or T c or Tvj) 5.1.1.2 Minimum and maximum of storage temperatures (T stg ) 5.1.2 Currents The ratings must cover the operation of the device over the range of operating temperatures. Where such ratings are temperature dependent, this dependence should be indicated. 5.1.2.1 Maximum continuous collector current (I C ) 5.1.2.2 Where appropriate, maximum peak repetitive collector current, under specified conditions (I CRM ). 5.1.2.3 Maximum continuous base current (I B ) 5.1.2.4 Where appropriate, maximum peak repetitive base current, under specified conditions (I BRM ). 5.1.2.5 Where appropriate, maximum emitter current, continuous and/or peak repetitive, under specified conditions (I E , I ERM ). 5.1.3 Voltages 5.1.3.1 Maximum collector-base voltage with zero emitter current (V CBO ) 5.1.3.2 Maximum collector-emitter voltage, either with zero base current or with a specified emitter-base reverse voltage (V CEO or V CEX ). 5.1.3.3 Maximum emitter-base voltage with zero collector current (V EBO ). 5.1.3.4 Collector-emitter sustaining voltage (V CEXsus ). Maximum rated value at specified collector current and specified base-emitter (reverse) voltage
5.1.4 Power dissipation 5.1.4.1 Maximum total power dissipation (without additional cooling for ambient- rated devices) up to ambient or case temperature of 25 °C (P tot ). 5.1.4.2 Derating factor above 25 °C or, for case-rated devices, derating curve 5.1.5 Safe operating areas 5.1.5.1 Forward biased safe operating area (FBSOA) Diagram showing the area of collector currents (I C ) and collector-emitter voltages (V CE ) which the transistor will sustain simultaneously without being damaged by thermal overload or by the first or second breakdown, for d.c. and pulse operation. Conditions to be specified: – case temperature (T c ); – pulse time (t P ); – duty cycle ( δ ). 5.1.5.2 Reverse biased safe operating area (RBSOA) Diagram showing the area of collector currents (I C ) and collector-emitter voltages (V CE ) which the transistor will sustain simultaneously for a short period of time during turn-off without being damaged Conditions to be specified: – case temperature (T c ); – reverse base current (I B2 ); – conditions in the drive circuit.
5.1.5.3 Short-circuit safe operating area (SCSOA) The SCSOA is given by a pair of values of short-circuit duration (t p(sc) ) and collector-emitter voltage (V CE ) that may not be exceeded under the load short circuit conditions. The device may be turned on and turned off again for shorting a voltage source without failure. 5.2 Characteristics 5.2.1 Cut-off currents NOTE One or more of these currents should be stated. 5.2.1.1 Collector-base current (I CBO ) – Maximum value at 25 °C, preferably at the maximum rated value of the collector-base voltage and with the emitter open-circuited. – Maximum value at a high operating temperature, at a voltage preferably between 65 % and 85 % of the maximum rated collector-base voltage, and with the emitter open-circuited. 5.2.1.2 Collector-emitter current (I CEX ) – Maximum value at 25 °C, preferably at the maximum rated value of collector-emitter voltage and under specified base-emitter bias conditions. – Maximum value at a high operating temperature, at a voltage preferably between 65 % and 85 % of the maximum rated collector-emitter voltage and under specified base-emitter bias conditions.